Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
Opt Lett. 2012 Oct 1;37(19):4035-7. doi: 10.1364/OL.37.004035.
We report silicon waveguide butt-coupled p-i-n InGaAs photodetectors epitaxially grown on silicon-on-insulator substrates by metalorganic chemical vapor deposition. The InGaAs absorption layer that is lattice-matched to InP is selectively grown on patterned SOI substrates, employing metamorphic growth of GaAs and InP buffer layers. We measure a dark current of 2.5 μA and a responsivity of 0.17 A/W at 1550 nm wavelength upon -1 V bias voltage, with a 20 μm × 20 μm InGaAs photodetector area. This device exhibits a 3 dB bandwidth of 9 GHz upon -4 V bias voltage. We demonstrate an open-eye diagram at 10 Gb/s data rate upon -4 V bias voltage.
我们报告了通过金属有机化学气相沉积在绝缘体上硅衬底上外延生长的硅波导背靠背 p-i-n InGaAs 光电探测器。与 InP 晶格匹配的 InGaAs 吸收层通过 GaAs 和 InP 缓冲层的变态生长选择性地生长在图案化的 SOI 衬底上。我们测量了一个 20μm×20μm 的 InGaAs 光电探测器在 -1V 偏压下的暗电流为 2.5μA，响应率为 0.17A/W，在 1550nm 波长下，在 -4V 偏压下具有 9GHz 的 3dB 带宽。我们在 -4V 偏压下演示了 10Gb/s 数据速率的开路眼图。
