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应变和取向调制的黑磷纳米带的能隙和有效质量。

Strain and orientation modulated bandgaps and effective masses of phosphorene nanoribbons.

机构信息

Department of Chemistry, University College London , London WC1E 6BT, United Kingdom.

出版信息

Nano Lett. 2014 Aug 13;14(8):4607-14. doi: 10.1021/nl501658d. Epub 2014 Jul 16.

DOI:10.1021/nl501658d
PMID:24992160
Abstract

Passivated phosphorene nanoribbons, armchair (a-PNR), diagonal (d-PNR), and zigzag (z-PNR), were investigated using density functional theory. Z-PNRs demonstrate the greatest quantum size effect, tuning the bandgap from 1.4 to 2.6 eV when the width is reduced from 26 to 6 Å. Strain effectively tunes charge carrier transport, leading to a sudden increase in electron effective mass at +8% strain for a-PNRs or hole effective mass at +3% strain for z-PNRs, differentiating the (mh*/me*) ratio by an order of magnitude in each case. Straining of d-PNRs results in a direct to indirect band gap transition at either -7% or +5% strain and therein creates degenerate energy valleys with potential applications for valleytronics and/or photocatalysis.

摘要

采用密度泛函理论研究了钝化磷烯纳米带,扶手椅(a-PNR)、对角(d-PNR)和锯齿(z-PNR)。z-PNR 表现出最大的量子尺寸效应,当宽度从 26 Å 减小到 6 Å 时,带隙从 1.4 eV 调谐到 2.6 eV。应变有效地调节载流子输运,导致 a-PNR 在+8%应变时电子有效质量突然增加,或 z-PNR 在+3%应变时空穴有效质量突然增加,在每种情况下,(mh*/me*)比相差一个数量级。d-PNR 的应变导致直接到间接带隙跃迁,分别在-7%或+5%应变时发生,从而在其中创建具有谷电子学和/或光催化应用潜力的简并能谷。

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