通过表面等离子体共振诱导的电极猝灭控制实现倒置聚合物发光二极管的显著性能提升。

Substantial performance improvement in inverted polymer light-emitting diodes via surface plasmon resonance induced electrode quenching control.

作者信息

Wu Xiaoyan, Liu Linlin, Choy Wallace C H, Yu Tiancheng, Cai Ping, Gu Yuejiao, Xie Zengqi, Zhang Yunan, Du Luyang, Mo Yueqi, Xu Shuping, Ma Yuguang

机构信息

Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology , Guangzhou 510640, China.

出版信息

ACS Appl Mater Interfaces. 2014 Jul 23;6(14):11001-6. doi: 10.1021/am5033764. Epub 2014 Jul 10.

DOI:10.1021/am5033764

PMID:25003531

Abstract

Inverted-type polymer light-emitting diodes with Au nanoparticles modified ITO cathode has exhibited improved brightness from 5900 to 15,000 cd m(-2) (1.5-fold enhancement) and enhanced luminous efficiency from 4.4 to 10.5 cd A(-1) (1.4-fold enhancement), when greenish emissive polymer-P-PPV was applied as active layer. Both the experimental and theoretical results show that it is mainly attributed to effective overlapping between local surface plasmon resonance induced by Au nanopartices and excitons quenching region at ZnO/P-PPV interface, which makes originally electrode-quenched excitons emissive and increases excitons efficiency.

摘要

具有金纳米颗粒修饰氧化铟锡阴极的倒置型聚合物发光二极管，当采用略带绿色发光的聚合物-P-PPV作为活性层时，其亮度从5900提高到15000 cd m(-2)（增强了1.5倍），发光效率从4.4提高到10.5 cd A(-1)（增强了1.4倍）。实验和理论结果均表明，这主要归因于金纳米颗粒诱导的局部表面等离子体共振与ZnO/P-PPV界面处激子猝灭区域之间的有效重叠，这使得原本被电极猝灭的激子能够发光并提高了激子效率。