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高剂量率(192)铱源在高原子序数界面处的剂量学扰动。

Dosimetric perturbations at high-Z interfaces with high dose rate (192)Ir source.

作者信息

Zhang Hualin, Das Indra J

机构信息

Department of Radiation Oncology, Northwestern University Feinberg School of Medicine, Northwestern Memorial Hospital, Chicago, IL 60611, USA; Department of Radiation Oncology, Indiana University School of Medicine, Indianapolis, IN 46202, USA.

Department of Radiation Oncology, Indiana University School of Medicine, Indianapolis, IN 46202, USA.

出版信息

Phys Med. 2014 Nov;30(7):782-90. doi: 10.1016/j.ejmp.2014.06.005. Epub 2014 Jul 6.

Abstract

PURPOSE

To investigate dose perturbations created by high-atomic number (Z) materials in high dose rate (HDR) Iridium-192 ((192)Ir) treatment region.

METHODS AND MATERIALS

A specially designed parallel plate ion chamber with 5 μm thick window was used to measure the dose rates from (192)Ir source downstream of the high-Z materials. A Monte Carlo (MC) code was employed to calculate the dose rates in both upstream and downstream of the high-Z interfaces at distances ranging from 0.01 to 2 mm. The dose perturbation factor (DPF) was defined as the ratio of dose rate with and without high-Z material in a water phantom. For verifying the Z dependence, both 0.1- and 1.0 mm-thick sheets of Pb, Au, Ta, Sn, Cu, Fe, Ti and Al were used.

RESULTS/CONCLUSIONS: The DPF depends on the Z and thickness of layer. At the downstream of a 0.1 mm layer of Pb, Au, Ta, Sn, Cu, Fe, Ti and Al, the DPF by MC were 3.73, 3.42, 3.04, 1.71, 1.04, 0.98, 0.92, or 0.94 respectively. When Z is greater than or equal to 50, the MC and experimental results disagree significantly (>20%) due to large DPF gradient but are in agreement for Z less than or equal to 29. Thin layers of Z greater than or equal to 50 near a (192)Ir source in water produce significant dose perturbations (i.e. increases) in the vicinity of the medium-high-Z interfaces and may thus cause local over-dose in (192)Ir brachytherapy. Conversely, this effect may potentially be used to deliver locally higher doses to targeted tissue.

摘要

目的

研究高原子序数(Z)材料在高剂量率(HDR)铱-192(¹⁹²Ir)治疗区域产生的剂量扰动。

方法和材料

使用一个专门设计的、带有5μm厚窗口的平行板电离室来测量高Z材料下游¹⁹²Ir源的剂量率。采用蒙特卡罗(MC)代码计算高Z界面上游和下游在0.01至2mm距离范围内的剂量率。剂量扰动因子(DPF)定义为水模体中有和没有高Z材料时剂量率的比值。为验证Z的依赖性,使用了0.1mm和1.0mm厚的铅、金、钽、锡、铜、铁、钛和铝片。

结果/结论:DPF取决于层的Z值和厚度。在0.1mm厚的铅、金、钽、锡、铜、铁、钛和铝层的下游,MC计算得到的DPF分别为3.73、3.42、3.04、1.71、1.04、0.98、0.92或0.94。当Z大于或等于50时,由于DPF梯度大,MC和实验结果差异显著(>20%),但对于Z小于或等于29时两者一致。水中¹⁹²Ir源附近Z大于或等于50的薄层在中高Z界面附近产生显著的剂量扰动(即增加),因此可能在¹⁹²Ir近距离治疗中导致局部过量照射。相反,这种效应可能潜在地用于向靶组织递送局部更高剂量。

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