Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
Phys Rev Lett. 2010 Jun 11;104(23):236602. doi: 10.1103/PhysRevLett.104.236602.
Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method exhibit a sharper interface and a giant MR of up to ∼300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR.
在有机自旋电子学中，磁性电极与有机间隔层之间的界面扩散是一个严重的问题，这使得人们难以理解自旋相关输运机制，并阻碍了获得理想的高磁电阻（MR）的目标。我们使用缓冲层辅助生长的方法，将纳米点而不是原子沉积在有机层上。使用这种方法制备的自旋阀具有更陡峭的界面和高达约 300%的巨大磁电阻。对电流-电压特性的分析表明，自旋相关载流子注入与观察到的磁电阻有关。
