Park Byoungnam, Whitham Kevin, Bian Kaifu, Lim Yee-Fun, Hanrath Tobias
School of Chemical and Biomolecular Engineering, Cornell University, Ithaca, New York 14853, USA.
Phys Chem Chem Phys. 2014 Dec 21;16(47):25729-33. doi: 10.1039/c4cp01507j. Epub 2014 Jul 14.
We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface ligands to modify the interface between PbS NCs and pentacene and demonstrate the impact of interface chemistry on charge carrier density and the FET mobility in a pentacene FET.
我们使用了一种双层场效应晶体管（FET），它由一层薄的硫化铅纳米晶体（NCs）薄膜与真空沉积的并五苯相连接组成，用于探测纳米晶体中的陷阱态。我们根据硫化铅纳米晶体对电荷载流子的捕获情况来解释观察到的阈值电压偏移，并将阈值电压偏移的大小与捕获载流子的数量联系起来。我们探索了一系列纳米晶体表面配体，以修饰硫化铅纳米晶体与并五苯之间的界面，并证明了界面化学对并五苯场效应晶体管中电荷载流子密度和场效应晶体管迁移率的影响。
