Spanton Eric M, Nowack Katja C, Du Lingjie, Sullivan Gerard, Du Rui-Rui, Moler Kathryn A
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA and Department of Physics, Stanford University, Stanford, California 94305, USA.
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA and Department of Applied Physics, Stanford University, Stanford, California 94305, USA.
Phys Rev Lett. 2014 Jul 11;113(2):026804. doi: 10.1103/PhysRevLett.113.026804.
Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport; that is, their measured conductances are much less than e(2)/h per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than h/e(2), it is independent of temperature up to 30 K within experimental resolution. Known candidate scattering mechanisms do not explain our observation of an effective edge resistance that is large yet temperature independent.
边缘长度远超过几微米的量子自旋霍尔器件并不表现出弹道输运；也就是说，它们测量得到的每一边的电导率远小于(e^2/h)。我们对具有长边缘的InAs/GaSb量子阱中的边缘电流进行了成像，并确定了有效边缘电阻。令人惊讶的是，尽管有效边缘电阻远大于(h/e^2)，但在实验分辨率范围内，直至30 K它都与温度无关。已知的候选散射机制无法解释我们所观察到的有效边缘电阻很大却与温度无关这一现象。
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