应变层InAs/GaInSb量子自旋霍尔绝缘体中的边缘态调控
Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators.
作者信息
Du Lingjie, Li Tingxin, Lou Wenkai, Wu Xingjun, Liu Xiaoxue, Han Zhongdong, Zhang Chi, Sullivan Gerard, Ikhlassi Amal, Chang Kai, Du Rui-Rui
机构信息
Department of Physics and Astronomy, Rice University, Houston, Texas 77251-1892, USA.
International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
出版信息
Phys Rev Lett. 2017 Aug 4;119(5):056803. doi: 10.1103/PhysRevLett.119.056803. Epub 2017 Aug 3.
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced up to fivefold as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry-protected properties consistent with the Z_{2} topological insulator. The InAs/GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.
我们报道了一类应变层InAs/GaInSb量子阱中的量子自旋霍尔绝缘体（QSHIs），其中与二元InAs/GaSb QSHI相比，体能隙增强了五倍。值得注意的是，随着边缘速度的相应增加，在零磁场和外加磁场下的边缘电导表现出与Z₂拓扑绝缘体一致的时间反演对称性保护特性。InAs/GaInSb双层为QSHI的未来研究和应用提供了一个备受追捧的平台。
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