Ichihashi Hayato, Yanagitani Takahiko, Takayanagi Shinji, Kawabe Masahiko, Matsukawa Mami
IEEE Trans Ultrason Ferroelectr Freq Control. 2014 Aug;61(8):1307-13. doi: 10.1109/TUFFC.2014.3037.
The resistivity-frequency characteristics of longitudinal wave velocities propagating parallel to the c-axis in a GaN single crystal were theoretically estimated by considering the piezoelectric acousto-electric effect. The temperature and frequency dependences of longitudinal and shear wave velocities in conductive and semiconductive GaN single-crystal samples were experimentally investigated by Brillouin scattering. The temperature dependence of longitudinal and shear wave velocities had a linear tendency in the conductive sample, whereas in the semiconductive sample, those had a similar tendency to the predicted velocity changes resulting from the piezoelectric stiffening effect. However, the temperature dependence of shear wave velocity, which does not possess piezoelectric coupling, had a tendency similar to that of the longitudinal wave in the semiconductive sample, unexpectedly. The frequency dependence of longitudinal wave velocities in the semiconductive sample had a tendency similar to the predicted velocity changes resulting from the piezoelectric stiffening effect.
通过考虑压电声电效应，从理论上估算了GaN单晶中平行于c轴传播的纵波速度的电阻率-频率特性。利用布里渊散射实验研究了导电和半导电GaN单晶样品中纵波和剪切波速度的温度和频率依赖性。在导电样品中，纵波和剪切波速度的温度依赖性呈线性趋势，而在半导电样品中，它们的趋势与压电硬化效应导致的预测速度变化相似。然而，令人意外的是，不具有压电耦合的剪切波速度的温度依赖性在半导电样品中与纵波的趋势相似。半导电样品中纵波速度的频率依赖性与压电硬化效应导致的预测速度变化趋势相似。
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