Department of Materials Science and Engineering, University of Illinois , Urbana, Illinois 61801, United States.
ACS Nano. 2014 Sep 23;8(9):8831-6. doi: 10.1021/nn503574p. Epub 2014 Aug 4.
Photo-oxidation of spin-cast films of 6,13-bis(triisopropylsilylethynyl) pentacene has been exploited to develop a novel means of spatially modulating doping in graphene. The degree of n-doping of initially p-type graphene can be varied by laser irradiation time or intensity with carrier density change up to ∼7 × 10(12) cm(-2). This n-doping approach is demonstrated as an effective means of creating p-n junctions in graphene. The ability to direct-write arbitrary shapes and patterns of n-doped regions in graphene simply by scanning a laser source should facilitate the exploitation of p-n junctions for a variety of electronic and optoelectronic device applications.
利用旋涂 6,13-双（三异丙基硅基乙炔基）并五苯薄膜的光氧化作用，开发了一种新的空间调制石墨烯掺杂的方法。初始 p 型石墨烯的 n 掺杂程度可以通过激光辐照时间或强度来调节，载流子密度变化高达约 7×10(12) cm(-2)。这种 n 掺杂方法被证明是在石墨烯中形成 p-n 结的有效方法。通过扫描激光源，可以直接在石墨烯中写入任意形状和图案的 n 掺杂区域，这应该有助于利用 p-n 结在各种电子和光电子器件应用中。
