Woodruff School of Mechanical Engineering and School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
ACS Appl Mater Interfaces. 2012 Sep 26;4(9):4781-6. doi: 10.1021/am301138v. Epub 2012 Sep 4.
3-Aminopropyltriethoxysilane (APTES) and perfluorooctyltriethoxysilane (PFES) were used to modify the interface between transferred CVD graphene films and its supporting dielectric to create n-type and p-type graphene, respectively. A graphene p-n junction was obtained by patterning both modifiers on the same dielectric and verified through the creation of a field effect transistor (FET). Characteristic I-V curves indicate the presence of two separate Dirac points which confirms an energy separation of neutrality points within the complementary regions. This method minimizes doping-induced defects and results in thermally stable graphene p-n junctions for temperatures up to 200 °C.
3-氨丙基三乙氧基硅烷（APTES）和全氟辛基三乙氧基硅烷（PFES）被用于修饰转移 CVD 石墨烯薄膜与其支撑电介质之间的界面，分别将其转化为 n 型和 p 型石墨烯。通过在同一电介质上图案化两种修饰剂获得了石墨烯 p-n 结，并通过场效应晶体管（FET）的构建进行了验证。特征 I-V 曲线表明存在两个单独的狄拉克点，这证实了互补区域内中性点的能量分离。该方法最大限度地减少了掺杂诱导的缺陷，并产生了热稳定的石墨烯 p-n 结，其温度高达 200°C。
