使用自组装单分子层制造石墨烯 p-n 结。

Creating graphene p-n junctions using self-assembled monolayers.

机构信息

Woodruff School of Mechanical Engineering and School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.

出版信息

ACS Appl Mater Interfaces. 2012 Sep 26;4(9):4781-6. doi: 10.1021/am301138v. Epub 2012 Sep 4.

DOI:10.1021/am301138v

PMID:22909428

Abstract

3-Aminopropyltriethoxysilane (APTES) and perfluorooctyltriethoxysilane (PFES) were used to modify the interface between transferred CVD graphene films and its supporting dielectric to create n-type and p-type graphene, respectively. A graphene p-n junction was obtained by patterning both modifiers on the same dielectric and verified through the creation of a field effect transistor (FET). Characteristic I-V curves indicate the presence of two separate Dirac points which confirms an energy separation of neutrality points within the complementary regions. This method minimizes doping-induced defects and results in thermally stable graphene p-n junctions for temperatures up to 200 °C.

摘要

3-氨丙基三乙氧基硅烷（APTES）和全氟辛基三乙氧基硅烷（PFES）被用于修饰转移 CVD 石墨烯薄膜与其支撑电介质之间的界面，分别将其转化为 n 型和 p 型石墨烯。通过在同一电介质上图案化两种修饰剂获得了石墨烯 p-n 结，并通过场效应晶体管（FET）的构建进行了验证。特征 I-V 曲线表明存在两个单独的狄拉克点，这证实了互补区域内中性点的能量分离。该方法最大限度地减少了掺杂诱导的缺陷，并产生了热稳定的石墨烯 p-n 结，其温度高达 200°C。