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可扩展的多孔石墨烯合成和致密电极制备,实现高性能超级电容器。

Scalable holey graphene synthesis and dense electrode fabrication toward high-performance ultracapacitors.

机构信息

Department of Materials Science and Engineering, University of Maryland , College Park, Maryland 20742, United States.

出版信息

ACS Nano. 2014 Aug 26;8(8):8255-65. doi: 10.1021/nn502635y. Epub 2014 Aug 5.

DOI:10.1021/nn502635y
PMID:25093751
Abstract

Graphene has attracted a lot of attention for ultracapacitor electrodes because of its high electrical conductivity, high surface area, and superb chemical stability. However, poor volumetric capacitive performance of typical graphene-based electrodes has hindered their practical applications because of the extremely low density. Herein we report a scalable synthesis method of holey graphene (h-Graphene) in a single step without using any catalysts or special chemicals. The film made of the as-synthesized h-Graphene exhibited relatively strong mechanical strength, 2D hole morphology, high density, and facile processability. This scalable one-step synthesis method for h-Graphene is time-efficient, cost-efficient, environmentally friendly, and generally applicable to other two-dimensional materials. The ultracapacitor electrodes based on the h-Graphene show a remarkably improved volumetric capacitance with about 700% increase compared to that of regular graphene electrodes. Modeling on individual h-Graphene was carried out to understand the excellent processability and improved ultracapacitor performance.

摘要

石墨烯因其高导电性、高比表面积和优异的化学稳定性而引起了超级电容器电极的广泛关注。然而,由于其极低的密度,典型的基于石墨烯的电极的体积电容性能较差,阻碍了它们的实际应用。在此,我们报告了一种在不使用任何催化剂或特殊化学品的情况下,一步法可大规模合成具有孔状石墨烯(h-Graphene)的方法。由所合成的 h-Graphene 制成的薄膜具有相对较强的机械强度、二维孔形态、高密度和易于加工性。这种可扩展的一步法 h-Graphene 合成方法高效、经济、环保,并且通常适用于其他二维材料。基于 h-Graphene 的超级电容器电极的体积电容得到了显著提高,与常规石墨烯电极相比,其体积电容提高了约 700%。对单个 h-Graphene 进行建模,以了解其优异的加工性能和改进的超级电容器性能。

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