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溶液法制备的场效应晶体管中氟化5,11-双(三乙基锗乙炔基)蒽并二噻吩微晶的强相关排列

Strongly correlated alignment of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene crystallites in solution-processed field-effect transistors.

作者信息

Kim Chang-Hyun, Hlaing Htay, Payne Marcia M, Yager Kevin G, Bonnassieux Yvan, Horowitz Gilles, Anthony John E, Kymissis Ioannis

机构信息

LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau (France).

出版信息

Chemphyschem. 2014 Oct 6;15(14):2913-6. doi: 10.1002/cphc.201402360. Epub 2014 Aug 8.

DOI:10.1002/cphc.201402360
PMID:25111007
Abstract

The crystallinity of an organic semiconductor film determines the efficiency of charge transport in electronic devices. This report presents a micro-to-nanoscale investigation on the crystal growth of fluorinated 5,11-bis(triethylgermylethynyl)anthradithiophene (diF-TEG-ADT) and its implication for the electrical behavior of organic field-effect transistors (OFETs). diF-TEG-ADT exhibits remarkable self-assembly through spin-cast preparation, with highly aligned edge-on stacking creating a fast hole-conducting channel for OFETs.

摘要

有机半导体薄膜的结晶度决定了电子器件中电荷传输的效率。本报告展示了对氟化5,11-双(三乙基锗乙炔基)蒽并二噻吩(diF-TEG-ADT)晶体生长的微观到纳米尺度研究及其对有机场效应晶体管(OFET)电学行为的影响。通过旋涂制备,diF-TEG-ADT表现出显著的自组装,高度取向的边缘堆积为OFET创造了快速空穴传导通道。

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