Kim Chang-Hyun, Horowitz Gilles
Department of Electronic Engineering, Gachon University, Seongnam 13120, Korea.
LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau, France.
Materials (Basel). 2019 Apr 10;12(7):1169. doi: 10.3390/ma12071169.
Contact resistance is a major characteristic of organic transistors, and its importance has received renewed attention due to the recent revelation of mobility overestimation. In this article, we propose a method to describe the contact resistance as a closed-form compact equation of the materials, interfaces, and geometrical parameters. The proposed model allows us to quantitatively understand the correlation between charge-injection and transport properties, while providing a tool for performance prediction and optimization. This theory is applied to a set of experimentally fabricated devices to exemplify how to utilize the model in practice.
接触电阻是有机晶体管的一个主要特性，由于最近发现迁移率被高估，其重要性再次受到关注。在本文中，我们提出了一种方法，将接触电阻描述为材料、界面和几何参数的闭式紧凑方程。所提出的模型使我们能够定量理解电荷注入与传输特性之间的相关性，同时提供一个性能预测和优化的工具。该理论应用于一组实验制备的器件，以举例说明如何在实际中利用该模型。
