Zhang Shumin, Zhang Pingping, Wang Yun, Ma Yanyun, Zhong Jun, Sun Xuhui
Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, and Collaborative Innovation Center of Suzhou Nano Science & Technology, Soochow University , Suzhou, Jiangsu 215123, China.
ACS Appl Mater Interfaces. 2014 Sep 10;6(17):14975-80. doi: 10.1021/am502671s. Epub 2014 Aug 20.
Well-ordered Cu-doped and undoped SnO2 porous thin films with large specific surface areas have been fabricated on a desired substrate using a self-assembled soft template combined with simple physical cosputtering deposition. The Cu-doped SnO2 porous film gas sensor shows a significant enhancement in its sensing performance, including a high sensitivity, selectivity, and a fast response and recovery time. The sensitivity of the Cu-doped SnO2 porous sensor is 1 order of magnitude higher than that of the undoped SnO2 sensor, with average response and recovery times to 100 ppm of H2S of ∼ 10.1 and ∼ 42.4 s, respectively, at the optimal operating temperature of 180 °C. The well-defined porous sensors fabricated by the method also exhibit high reproducibility because of the accurately controlled fabrication process. The facile process can be easily extended to the fabrication of other semiconductor oxide gas sensors with easy doping and multilayer porous nanostructure for practical sensing applications.
利用自组装软模板结合简单的物理共溅射沉积方法，在所需衬底上制备出了具有大比表面积的有序掺杂铜和未掺杂的二氧化锡多孔薄膜。掺杂铜的二氧化锡多孔薄膜气体传感器的传感性能有显著提高，包括高灵敏度、选择性以及快速的响应和恢复时间。掺杂铜的二氧化锡多孔传感器的灵敏度比未掺杂的二氧化锡传感器高1个数量级，在180℃的最佳工作温度下，对100 ppm硫化氢的平均响应和恢复时间分别约为10.1秒和42.4秒。通过该方法制备的结构明确的多孔传感器由于制备过程精确可控，还具有高重现性。这种简便的工艺可以很容易地扩展到其他半导体氧化物气体传感器的制备，用于实际传感应用，且易于掺杂并形成多层多孔纳米结构。
