基于掠角沉积法制备的金属催化SnO₂纳米柱的高灵敏度硫化氢传感器

Highly Sensitive H2S Sensor Based on the Metal-Catalyzed SnO2 Nanocolumns Fabricated by Glancing Angle Deposition.

作者信息

Yoo Kwang Soo, Han Soo Deok, Moon Hi Gyu, Yoon Seok-Jin, Kang Chong-Yun

机构信息

Department of Materials Science and Engineering, University of Seoul, 163, Seoulsiripdae-ro, Dongdaemun-gu, Seoul 130-743, Korea.

Center for Electronic Materials, Korea Institute of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul 136-791, Korea.

出版信息

Sensors (Basel). 2015 Jun 30;15(7):15468-77. doi: 10.3390/s150715468.

DOI:10.3390/s150715468

PMID:26134105

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4541839/

Abstract

As highly sensitive H2S gas sensors, Au- and Ag-catalyzed SnO2 thin films with morphology-controlled nanostructures were fabricated by using e-beam evaporation in combination with the glancing angle deposition (GAD) technique. After annealing at 500 °C for 40 h, the sensors showed a polycrystalline phase with a porous, tilted columnar nanostructure. The gas sensitivities (S = Rgas/Rair) of Au and Ag-catalyzed SnO2 sensors fabricated by the GAD process were 0.009 and 0.015, respectively, under 5 ppm H2S at 300 °C, and the 90% response time was approximately 5 s. These sensors showed excellent sensitivities compared with the SnO2 thin film sensors that were deposited normally (glancing angle = 0°, S = 0.48).

摘要

作为高灵敏度的H2S气体传感器，采用电子束蒸发结合掠角沉积（GAD）技术制备了具有形态可控纳米结构的金催化和银催化的SnO2薄膜。在500℃退火40小时后，传感器呈现出具有多孔倾斜柱状纳米结构的多晶相。通过GAD工艺制备的金催化和银催化的SnO2传感器在300℃、5 ppm H2S条件下的气体灵敏度（S = Rgas/Rair）分别为0.009和0.015，90%响应时间约为5秒。与正常沉积的SnO2薄膜传感器（掠角 = 0°，S = 0.48）相比，这些传感器表现出优异的灵敏度。