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钙钛矿光伏器件采用溶液处理的 TiO2 作为界面电子传输层,以提高性能和稳定性。

Perovskite photovoltaics featuring solution-processable TiO2 as an interfacial electron-transporting layer display to improve performance and stability.

机构信息

Department of Materials Engineering, Ming Chi University of Technology, 84 Gunjuan Road, Taishan, New Taipei City, 243, Taiwan.

出版信息

Nanoscale. 2014 Oct 7;6(19):11403-10. doi: 10.1039/c4nr03366c.

Abstract

In this study we used solution-processable crystalline TiO2 nanoparticles as an interfacial modified layer between the active layer and aluminum cathode to fabricate CH3NH3PbI3/PCBM-based planar heterojunction perovskite photovoltaic (PPV) devices. We optimized the performance of the PPV device prepared without TiO2 by varying the preheating temperature of the indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) (PEDOT) substrate, obtaining a power conversion efficiency (PCE) of 6.3% under simulated AM 1.5 G irradiation (100 mW cm(-2)). After incorporating the TiO2 layer, we obtained a much higher PCE of 7.0%. The TiO2-containing PPV device exhibited extremely high stability (retaining ∼96% of its PCE after 1000 h) under long-term storage in a dark N2-filled glove box; the unencapsulated device retained approximately 80% of its original efficiency (T80) after 1 week under ambient conditions (ISOS-D-1; defined as 23 °C/50% RH). In contrast, the normal device was sensitive to ambient conditions with a value of T80 at only 3 h. We attributed the improved device performance (PCE, stability) to the enhanced electron transporting, hole blocking, and barrier properties arising from the presence of the TiO2 layer.

摘要

在这项研究中,我们使用可溶液处理的结晶 TiO2 纳米粒子作为活性层和铝阴极之间的界面改性层,制备基于 CH3NH3PbI3/PCBM 的平面异质结钙钛矿光伏(PPV)器件。我们通过改变铟锡氧化物(ITO)/聚(3,4-亚乙基二氧噻吩)(PEDOT)基底的预热温度,优化了未使用 TiO2 制备的 PPV 器件的性能,在模拟 AM 1.5 G 照射(100 mW cm-2)下获得了 6.3%的功率转换效率(PCE)。在加入 TiO2 层后,我们获得了更高的 7.0%的 PCE。含 TiO2 的 PPV 器件在黑暗的 N2 填充手套箱中长期储存下表现出极高的稳定性(在 1000 小时后保留其 PCE 的约 96%);未封装的器件在环境条件下(ISOS-D-1;定义为 23°C/50% RH)1 周后保留了其原始效率(T80)的约 80%。相比之下,正常器件对环境条件敏感,T80 值仅为 3 小时。我们将器件性能(PCE、稳定性)的提高归因于 TiO2 层的存在增强了电子输运、空穴阻挡和势垒性能。

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