Alizadeh Taher, Rashedi Mariyam
Department of Applied Chemistry, Faculty of Science, University of Mohaghegh Ardabili, Daneshgah Street, P.O. Box 179, 56199-11367 Ardabil, Iran.
Department of Applied Chemistry, Faculty of Science, University of Mohaghegh Ardabili, Daneshgah Street, P.O. Box 179, 56199-11367 Ardabil, Iran.
Anal Chim Acta. 2014 Sep 16;843:7-17. doi: 10.1016/j.aca.2014.06.052. Epub 2014 Jul 3.
In this study, a new strategy was proposed for the preparation of As (III)-imprinted polymer by using arsenic (methacrylate)3 as template. Precipitation polymerization was utilized to synthesize nano-sized As (III)-imprinted polymer. Methacrylic acid and ethylene glycol dimethacrylate were used as the functional monomer and cross-linking agent, respectively. In order to assembly functional monomers around As (III) ion, sodium arsenite and methacrylic acid were heated in the presence of hydroquinone, leading to arsenic (methacrylate)3. The nano-sized As (III) selective polymer was characterized by FT-IR and scanning electron microscopy techniques (SEM). It was demonstrated that arsenic was recognized as As(3+) by the selective cavities of the synthesized IIP. Based on the prepared polymer, the first arsenic cation selective membrane electrode was introduced. Membrane electrode was constructed by dispersion of As (III)-imprinted polymer nanoparticles in poly(vinyl chloride), plasticized with di-nonylphthalate. The IIP-modified electrode exhibited a Nernstian response (20.4±0.5 mV decade(-1)) to arsenic ion over a wide concentration range (7.0×10(-7) to 1.0×10(-1) mol L(-1)) with a lower detection limit of 5.0×10(-7) mol L(-1). Unlike this, the non-imprinted polymer (NIP)-based membrane electrode was not sensitive to arsenic in aqueous solution. The selectivity of the developed sensor to As (III) was shown to be satisfactory. The sensor was used for arsenic determination in some real samples.
在本研究中，提出了一种以三（甲基丙烯酸）砷为模板制备砷（III）印迹聚合物的新策略。采用沉淀聚合法合成了纳米级砷（III）印迹聚合物。分别以甲基丙烯酸和乙二醇二甲基丙烯酸酯作为功能单体和交联剂。为了使功能单体围绕砷（III）离子组装，将亚砷酸钠和甲基丙烯酸在对苯二酚存在下加热，生成三（甲基丙烯酸）砷。通过傅里叶变换红外光谱（FT-IR）和扫描电子显微镜技术（SEM）对纳米级砷（III）选择性聚合物进行了表征。结果表明，合成的印迹聚合物的选择性空腔将砷识别为As(3+)。基于所制备的聚合物，首次引入了砷阳离子选择性膜电极。膜电极是通过将砷（III）印迹聚合物纳米颗粒分散在聚氯乙烯中，并以邻苯二甲酸二壬酯增塑而成。该印迹聚合物修饰电极在较宽的浓度范围（7.0×10(-7)至1.0×10(-1) mol L(-1)）内对砷离子呈现能斯特响应（20.4±0.5 mV decade(-1)），检测下限为5.0×10(-7) mol L(-1)。与此不同的是，基于非印迹聚合物（NIP）的膜电极对水溶液中的砷不敏感。所开发的传感器对砷（III）的选择性令人满意。该传感器用于一些实际样品中砷的测定。
