铁磁半导体（Ga，Mn）As薄膜中表面钉扎的自旋波共振模型

Spin-wave resonance model of surface pinning in ferromagnetic semiconductor (Ga,Mn)As thin films.

作者信息

Puszkarski H, Tomczak P

机构信息

Surface Physics Division, Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, Poland.

Quantum Physics Division, Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, Poland.

出版信息

Sci Rep. 2014 Aug 28;4:6135. doi: 10.1038/srep06135.

DOI:10.1038/srep06135

PMID:25164617

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4147375/

Abstract

The source of spin-wave resonance (SWR) in thin films of the ferromagnetic semiconductor (Ga,Mn)As is still under debate: does SWR stem from the surface anisotropy (in which case the surface inhomogeneity (SI) model would apply), or does it originate in the bulk inhomogeneity of the magnetic structure of the sample (and thus requires the use of the volume inhomogeneity (VI) model)? This paper outlines the ground on which the controversy arose and shows why in different conditions a resonance sample may meet the assumptions of either the SI or the VI model.

摘要

铁磁半导体（Ga，Mn）As薄膜中自旋波共振（SWR）的来源仍存在争议：SWR是源于表面各向异性（在这种情况下表面不均匀性（SI）模型适用），还是源于样品磁性结构的体不均匀性（因此需要使用体积不均匀性（VI）模型）？本文概述了争议产生的基础，并说明了为什么在不同条件下，共振样品可能符合SI模型或VI模型的假设。