Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D
Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan. Institute of Physics and College of Science, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw, Poland. Laboratoire de Spectr.
Science. 2000 Feb 11;287(5455):1019-22. doi: 10.1126/science.287.5455.1019.
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
锰化合物半导体中的铁磁性不仅为精确调控半导体中的磁和自旋相关现象开辟了前景，这种精确程度类似于III-V族化合物，还解决了一个关于磁相互作用起源的问题，即对于仅5%的锰浓度，其居里温度（T(C)）高达110K。齐纳铁磁性模型最初于1950年针对过渡金属提出，它可以解释Ga(1-)(x)Mn(x)As及其II-VI族对应物Zn(1-)(x)Mn(x)Te的T(C)，并用于预测居里温度超过室温的材料，这是迈向同时利用电荷和自旋的半导体电子学的重要一步。
