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拓扑绝缘体上的表面态磁化和手性边缘态

Surface state magnetization and chiral edge states on topological insulators.

作者信息

Zhang Fan, Kane C L, Mele E J

机构信息

Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA.

出版信息

Phys Rev Lett. 2013 Jan 25;110(4):046404. doi: 10.1103/PhysRevLett.110.046404.

Abstract

We study the interaction between a ferromagnetically ordered medium and the surface states of a topological insulator with a general surface termination that were identified recently [F. Zhang et al. Phys. Rev. B 86, 081303(R) (2012)]. This interaction is strongly crystal face dependent and can generate chiral states along edges between crystal facets even for a uniform magnetization. While magnetization parallel to quintuple layers shifts the momentum of the Dirac point, perpendicular magnetization lifts the Kramers degeneracy at any Dirac points except on the side face, where the spectrum remains gapless and the Hall conductivity switches sign. Chiral states can be found at any edge that reverses the projection of the surface normal to the stacking direction of quintuple layers. Magnetization also weakly hybridizes noncleavage surfaces.

摘要

我们研究了铁磁有序介质与具有一般表面终止的拓扑绝缘体的表面态之间的相互作用,这种表面终止最近已被确定[F. Zhang等人,《物理评论B》86, 081303(R) (2012)]。这种相互作用强烈依赖于晶面,即使对于均匀磁化,也能在晶面之间的边缘处产生手性态。当平行于五元层的磁化使狄拉克点的动量发生移动时,垂直磁化会消除除侧面以外任何狄拉克点处的克莱默简并,在侧面处能谱仍然无隙且霍尔电导率会改变符号。在手性态可以在任何使表面法线投影相对于五元层堆叠方向发生反转的边缘处找到。磁化也会使非解理表面发生微弱的杂化。

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