Ares N, Golovach V N, Katsaros G, Stoffel M, Fournel F, Glazman L I, Schmidt O G, De Franceschi S
SPSMS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, F-38054 Grenoble Cedex 9, France.
SPSMS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, F-38054 Grenoble Cedex 9, France and Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden, Germany and IKERBASQUE, Basque Foundation for Science, E-48011 Bilbao, Spain and Centro de Física de Materiales (CFM-MPC), Centro Mixto CSIC-UPV/EHU, Manuel de Lardizabal 5, E-20018 San Sebastián, Spain.
Phys Rev Lett. 2013 Jan 25;110(4):046602. doi: 10.1103/PhysRevLett.110.046602. Epub 2013 Jan 23.
We report an electric-field-induced giant modulation of the hole g factor in SiGe nanocrystals. The observed effect is ascribed to a so-far overlooked contribution to the g factor that stems from the mixing between heavy- and light-hole wave functions. We show that the relative displacement between the confined heavy- and light-hole states, occurring upon application of the electric field, alters their mixing strength leading to a strong nonmonotonic modulation of the g factor.
我们报道了在SiGe纳米晶体中，电场诱导的空穴g因子的巨大调制。观察到的效应归因于迄今为止被忽视的对g因子的贡献，该贡献源于重空穴和轻空穴波函数之间的混合。我们表明，在施加电场时，受限重空穴和轻空穴态之间的相对位移会改变它们的混合强度，从而导致g因子的强烈非单调调制。
