Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom.
Phys Rev Lett. 2011 Jan 14;106(2):027402. doi: 10.1103/PhysRevLett.106.027402. Epub 2011 Jan 10.
We measure the hyperfine interaction of the valence band hole with nuclear spins in single InP/GaInP semiconductor quantum dots. Detection of photoluminescence (PL) of both "bright" and "dark" excitons enables direct measurement of the Overhauser shift of states with the same electron but opposite hole spin projections. We find that the hole hyperfine constant is ≈11% of that of the electron and has the opposite sign. By measuring the degree of circular polarization of the PL, an upper limit to the contribution of the heavy-light hole mixing to the measured value of the hole hyperfine constant is deduced. Our results imply that environment-independent hole spins are not realizable in III-V semiconductor, a result important for solid-state quantum information processing using hole spin qubits.
我们测量了单个 InP/GaInP 半导体量子点中价带空穴与核自旋的超精细相互作用。通过探测“亮”激子和“暗”激子的光致发光(PL),可以直接测量具有相同电子但相反空穴自旋投影的状态的奥弗豪瑟位移。我们发现,空穴超精细常数约为电子超精细常数的 11%,符号相反。通过测量 PL 的圆偏振度,推断出重轻空穴混合对测量空穴超精细常数值的贡献的上限。我们的结果表明,在 III-V 半导体中,实现与环境无关的空穴自旋是不可能的,这对于使用空穴自旋量子位进行固态量子信息处理的结果是重要的。