Suppr超能文献

室温下远低于半导体带隙的光电导率。

Room-temperature photoconductivity far below the semiconductor bandgap.

机构信息

National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, PR China; Key laboratory of Space Active Opto-Electronics Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, PR China.

出版信息

Adv Mater. 2014 Oct;26(38):6594-8. doi: 10.1002/adma.201402352. Epub 2014 Sep 1.

Abstract

A concept to stimulate photoconductivity in a semiconductor well below its bandgap in a metal-semiconductor-metal structure with sub-wavelength spacing is proposed. A potential well is induced in the semiconductor by external electromagnetic radiation to trap carriers from the metals. This opens an avenue to generate carriers by photons without adequate excitation energy and is expected to have great significance in modern materials.

摘要

提出了一种在金属-半导体-金属结构中,在半导体的能带隙以下激发其光电导的概念,该结构的间距小于波长。通过外部电磁辐射在半导体中感应出势阱,从而从金属中捕获载流子。这为利用光子产生载流子提供了一种途径,而无需足够的激发能量,有望在现代材料中具有重要意义。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验