National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, PR China; Key laboratory of Space Active Opto-Electronics Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, PR China.
Adv Mater. 2014 Oct;26(38):6594-8. doi: 10.1002/adma.201402352. Epub 2014 Sep 1.
A concept to stimulate photoconductivity in a semiconductor well below its bandgap in a metal-semiconductor-metal structure with sub-wavelength spacing is proposed. A potential well is induced in the semiconductor by external electromagnetic radiation to trap carriers from the metals. This opens an avenue to generate carriers by photons without adequate excitation energy and is expected to have great significance in modern materials.
提出了一种在金属-半导体-金属结构中,在半导体的能带隙以下激发其光电导的概念,该结构的间距小于波长。通过外部电磁辐射在半导体中感应出势阱,从而从金属中捕获载流子。这为利用光子产生载流子提供了一种途径,而无需足够的激发能量,有望在现代材料中具有重要意义。