Bhadrachalam Pradeep, Subramanian Ramkumar, Ray Vishva, Ma Liang-Chieh, Wang Weichao, Kim Jiyoung, Cho Kyeongjae, Koh Seong Jin
1] Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019, USA [2] Nanotechnology Research Center, University of Texas at Arlington, Arlington, Texas 76019, USA.
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, USA.
Nat Commun. 2014 Sep 10;5:4745. doi: 10.1038/ncomms5745.
Fermi-Dirac electron thermal excitation is an intrinsic phenomenon that limits functionality of various electron systems. Efforts to manipulate electron thermal excitation have been successful when the entire system is cooled to cryogenic temperatures, typically <1 K. Here we show that electron thermal excitation can be effectively suppressed at room temperature, and energy-suppressed electrons, whose energy distribution corresponds to an effective electron temperature of 45 K, can be transported throughout device components without external cooling. This is accomplished using a discrete level of a quantum well, which filters out thermally excited electrons and permits only energy-suppressed electrons to participate in electron transport. The quantum well (2 nm of Cr2O3) is formed between source (Cr) and tunnelling barrier (SiO2) in a double-barrier-tunnelling-junction structure having a quantum dot as the central island. Cold electron transport is detected from extremely narrow differential conductance peaks in electron tunnelling through CdSe quantum dots, with full widths at half maximum of only ~15 mV at room temperature.
费米 - 狄拉克电子热激发是一种限制各种电子系统功能的固有现象。当整个系统冷却到低温温度（通常<1K）时，操纵电子热激发的努力已取得成功。在此我们表明，在室温下电子热激发可以被有效抑制，并且能量被抑制的电子（其能量分布对应于约45K的有效电子温度）可以在无需外部冷却的情况下在整个器件组件中传输。这是通过使用量子阱的离散能级来实现的，该能级滤除热激发电子，仅允许能量被抑制的电子参与电子传输。量子阱（约2nm的Cr2O3）形成于具有量子点作为中心岛的双势垒隧穿结结构的源极（Cr）和隧穿势垒（SiO2）之间。通过CdSe量子点的电子隧穿中极其狭窄的微分电导峰检测到冷电子传输，在室温下半高宽仅约15mV。
Zotero 插件
