Nguyen Quynh Pham Bao, Baek Sueng Ji, Kim Mi Jin, Shin Na Young, Kim Gyeong Woo, Choe Dong Cheol, Kwon Jang Hyuk, Chai Kyu Yun
The Division of Bio-Nanochemistry, College of Natural Sciences and the Institute for Basic Science, Wonkwang University, Iksan City, Chonbuk 570-749, Korea.
Venture Building, #824, Palbokdong 2-ga, Deokjin-gu, Jeonju, Chonbuk 561-844, Korea.
Molecules. 2014 Sep 10;19(9):14247-56. doi: 10.3390/molecules190914247.
During the past few years, organic light emitting diodes (OLEDs) have been increasingly studied due to their emerging applicability. However, some of the properties of existing OLEDs could be improved, such as their overall efficiency and durability; these aspects have been addressed in the current study. A series of novel hole-transporting materials (HTMs) 3a-c based on 4-(9H-carbazol-9-yl)triphenylamine conjugated with different carbazole or triphenylamine derivatives have been readily synthesized by Suzuki coupling reactions. The resulting compounds showed good thermal stabilities with high glass transition temperatures between 148 and 165 °C. The introduction of HTMs 3b and 3c into the standard devices ITO/HATCN/NPB/HTMs 3 (indium tin oxide/dipyrazino(2,3-f:2',3'-h)quinoxaline 2,3,6,7,10,11-hexacarbonitrile/N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine/HTMs)/CBP (4,4'-Bis(N-carbazolyl)-1,1'-biphenyl): 5% Ir(ppy)3/Bphen/LiF/Al (tris[2-phenylpyridinato-C2,N]iridium(III)/4,7-diphenyl-1,10-phenanthroline/LiF/Al) resulted in significantly enhanced current, power, and external quantum efficiencies (EQE) as compared to the reference device without any layers of HTMs 3.
在过去几年中,有机发光二极管(OLED)因其日益凸显的适用性而受到越来越多的研究。然而,现有OLED的一些性能仍有待改进,比如其整体效率和耐久性;本研究针对这些方面展开了探讨。通过铃木偶联反应,已轻松合成了一系列基于4-(9H-咔唑-9-基)三苯胺并与不同咔唑或三苯胺衍生物共轭的新型空穴传输材料(HTM)3a-c。所得化合物具有良好的热稳定性,玻璃化转变温度较高,介于148至165℃之间。将HTM 3b和3c引入标准器件ITO/HATCN/NPB/HTM 3(氧化铟锡/二吡嗪并(2,3-f:2',3'-h)喹喔啉-2,3,6,7,10,11-六腈/N,N'-双(萘-1-基)-N,N'-双(苯基)-联苯胺/HTM)/CBP(4,4'-双(N-咔唑基)-1,1'-联苯): 5% Ir(ppy)3/Bphen/LiF/Al(三[2-苯基吡啶-C2,N]铱(III)/4,7-二苯基-1,10-菲咯啉/LiF/Al),与不含任何HTM 3层的参考器件相比,电流、功率和外量子效率(EQE)均显著提高。