Wang Fei, Clément Nicolas, Ducatteau Damien, Troadec David, Tanbakuchi Hassan, Legrand Bernard, Dambrine Gilles, Théron Didier
Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), CNRS UMR 8520, University of Lille, Avenue Poincaré, CS 60069, F-59652 Villeneuve d'Ascq, France.
Nanotechnology. 2014 Oct 10;25(40):405703. doi: 10.1088/0957-4484/25/40/405703. Epub 2014 Sep 12.
We present a method to characterize sub-10 nm capacitors and tunnel junctions by interferometric scanning microwave microscopy (iSMM) at 7.8 GHz. At such device scaling, the small water meniscus surrounding the iSMM tip should be reduced by proper tip tuning. Quantitative impedance characterization of attofarad range capacitors is achieved using an 'on-chip' calibration kit facing thousands of nanodevices. Nanoscale capacitors and tunnel barriers were detected through variations in the amplitude and phase of the reflected microwave signal, respectively. This study promises quantitative impedance characterization of a wide range of emerging functional nanoscale devices.
我们提出了一种通过7.8 GHz的干涉扫描微波显微镜（iSMM）来表征亚10纳米电容器和隧道结的方法。在这种器件缩放比例下，应通过适当的针尖调谐来减小iSMM针尖周围的小水弯月面。使用面向数千个纳米器件的“片上”校准套件实现了对阿托法拉范围电容器的定量阻抗表征。分别通过反射微波信号的幅度和相位变化检测到了纳米级电容器和隧道势垒。这项研究有望对各种新兴的功能性纳米级器件进行定量阻抗表征。
