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叶面喷施纳米硅可减轻水稻幼苗的镉毒性。

Foliar application with nano-silicon alleviates Cd toxicity in rice seedlings.

作者信息

Wang Shihua, Wang Fayuan, Gao Shuangcheng

机构信息

Agricultural College, Henan University of Science and Technology, Luoyang, Henan Province, 471003, People's Republic of China.

出版信息

Environ Sci Pollut Res Int. 2015 Feb;22(4):2837-45. doi: 10.1007/s11356-014-3525-0. Epub 2014 Sep 14.

Abstract

Nanofertilizers may be more effective than regular fertilizers in improving plant nutrition, enhancing nutrition use efficiency, and protecting plants from environmental stress. A hydroponic pot experiment was conducted to study the role of foliar application with 2.5 mM nano-silicon in alleviating Cd stress in rice seedlings (Oryza sativa L. cv Youyou 128) grown in solution added with or without 20 μM CdCl2. The results showed that Cd treatment decreased the growth and the contents of Mg, Fe, Zn, chlorophyll a, and glutathione (GSH), accompanied by a significant increase in Cd accumulation. However, foliar application with nano-Si improved the growth, Mg, Fe, and Zn nutrition, and the contents of chlorophyll a of the rice seedlings under Cd stress and decreased Cd accumulation and translocation of Cd from root to shoot. Cd treatment produced oxidative stress to rice seedlings indicated by a higher lipid peroxidation level (as malondialdehyde (MDA)) and higher activities of antioxidant enzymes such as superoxide dismutase (SOD), peroxidase (POD), and catalase (CAT), and a lower GSH content. However, those nano-Si-treated plants had lower MDA but higher GSH content and different antioxidant enzyme activities, indicating a higher Cd tolerance in them. The results suggested that nano-Si application alleviated Cd toxicity in rice by decreasing Cd accumulation, Cd partitioning in shoot and MDA level and by increasing content of some mineral elements (Mg, Fe, and Zn) and antioxidant capacity.

摘要

纳米肥料在改善植物营养、提高养分利用效率以及保护植物免受环境胁迫方面可能比常规肥料更有效。进行了一项水培盆栽试验,以研究叶面喷施2.5 mM纳米硅对在添加或不添加20 μM CdCl2的溶液中生长的水稻幼苗(Oryza sativa L. cv Youyou 128)缓解镉胁迫的作用。结果表明,镉处理降低了水稻幼苗的生长以及镁、铁、锌、叶绿素a和谷胱甘肽(GSH)的含量,同时镉积累显著增加。然而,叶面喷施纳米硅改善了镉胁迫下水稻幼苗的生长、镁、铁和锌营养状况以及叶绿素a含量,并减少了镉积累和镉从根部向地上部的转运。镉处理对水稻幼苗产生了氧化胁迫,表现为脂质过氧化水平较高(以丙二醛(MDA)表示)、超氧化物歧化酶(SOD)、过氧化物酶(POD)和过氧化氢酶(CAT)等抗氧化酶活性较高以及GSH含量较低。然而,那些经过纳米硅处理的植株MDA含量较低,但GSH含量较高且抗氧化酶活性不同,表明它们对镉的耐受性更高。结果表明,施用纳米硅通过减少镉积累、地上部镉分配和MDA水平以及增加一些矿质元素(镁、铁和锌)的含量和抗氧化能力来缓解水稻中的镉毒性。

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