Green Avery J, Diebold Alain C
Optical Physics Group,SUNY College of Nanoscale Science and Engineering,257 Fuller Road,Albany,NY 12203,USA.
Microsc Microanal. 2014 Dec;20(6):1753-63. doi: 10.1017/S1431927614013105. Epub 2014 Sep 15.
Recent studies have shown that when graphene is placed on a thin hexagonal boron nitride (h-BN) substrate, unlike when it is placed on a typical SiO2 surface, it can closely approach the ideal carrier mobility observed in suspended graphene samples. This study further examines the epitaxial relationship between graphene and h-BN substrate with high-resolution transmission electron microscopy simulation. Virtual monolayer and multilayer stacks of h-BN were produced with a monolayer of graphene on top, on bottom, and in between h-BN layers, in order to study this interface. Once the simulations were performed, the phase contrast image and Moiré pattern created by this heterostack were analyzed for local and global intensity minima and maxima. In addition, h-BN substrate thickness and rotations between h-BN and graphene were probed and analyzed. The simulated images produced in this work will be used to help understand subsequent transmission electron microscopy images and electron energy-loss studies.
最近的研究表明，当石墨烯置于薄的六方氮化硼（h-BN）衬底上时，与置于典型的SiO2表面不同，它能够接近悬浮石墨烯样品中观察到的理想载流子迁移率。本研究利用高分辨率透射电子显微镜模拟进一步研究了石墨烯与h-BN衬底之间的外延关系。通过在h-BN的虚拟单层和多层堆叠结构的顶部、底部以及层间放置单层石墨烯来研究该界面。模拟完成后，分析该异质堆叠产生的相衬图像和莫尔条纹，以确定局部和全局强度的最小值和最大值。此外，还对h-BN衬底厚度以及h-BN与石墨烯之间的旋转进行了探测和分析。这项工作中产生的模拟图像将用于帮助理解后续的透射电子显微镜图像和电子能量损失研究。
