Zhu Laipan, Liu Yu, Gao Hansong, Qin Xudong, Li Yuan, Wu Qing, Chen Yonghai
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People's Republic of China.
Nanoscale Res Lett. 2014 Sep 14;9(1):493. doi: 10.1186/1556-276X-9-493. eCollection 2014.
We observed an anomalous linear photogalvanic effect (ALPGE) in undoped InGaAs/AlGaAs multiple quantum well and studied its wavelength dependence in details. This effect is believed to originate from the optical momentum alignment effect and the inhomogeneity of light intensity. We find that the spot location with the maximum ALPGE current is wavelength independent. And the normalized ALPGE current decreasing at smaller wavelengths is attributed to the sharp decrease of the momentum and energy relaxation time. The electrical measurement of the spectra dependence of ALPGE is highly sensitive proving to be an effective method for detecting the momentum anisotropy of photoinduced carriers and band coupling.
我们在未掺杂的InGaAs/AlGaAs多量子阱中观察到反常线性光电流效应（ALPGE），并详细研究了其波长依赖性。这种效应被认为源于光动量对准效应和光强的不均匀性。我们发现，具有最大ALPGE电流的光斑位置与波长无关。在较小波长下归一化的ALPGE电流下降归因于动量和能量弛豫时间的急剧下降。对ALPGE光谱依赖性的电学测量高度灵敏，证明是检测光生载流子动量各向异性和能带耦合的有效方法。
