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InGaAs/AlGaAs量子阱中带间激发时由Rashba型和Dresselhaus型圆偏振光电流效应诱导的自旋光电流谱的温度依赖性

Temperature dependence of spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/AlGaAs quantum wells.

作者信息

Yu Jinling, Cheng Shuying, Lai Yunfeng, Zheng Qiao, Zhu Laipan, Chen Yonghai, Ren Jun

出版信息

Opt Express. 2015 Oct 19;23(21):27250-9. doi: 10.1364/OE.23.027250.

DOI:10.1364/OE.23.027250
PMID:26480385
Abstract

Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect (CPGE) at inter-band excitation have been experimentally investigated in InGaAs/AlGaAs quantum wells at a temperature range of 80 to 290 K. It is found that, the sign of Rashba-type current reverses at low temperatures, while that of Dresselhaus-type remains unchanged. The temperature dependence of ratio of Rashba and Dresselhaus spin-orbit coupling parameters, increasing from -6.7 to 17.9, is obtained, and the possible reasons are discussed. We also develop a model to extract the Rashba-type effective electric field at different temperatures. It is demonstrated that excitonic effect will significantly influence the Rashba-type CPGE, while it has little effect on Dresselhaus-type CPGE.

摘要

在80至290K的温度范围内,对InGaAs/AlGaAs量子阱中带间激发时由Rashba型和Dresselhaus型圆偏振光电流效应(CPGE)诱导的自旋光电流光谱进行了实验研究。结果发现,Rashba型电流的符号在低温下反转,而Dresselhaus型电流的符号保持不变。得到了Rashba和Dresselhaus自旋轨道耦合参数比值的温度依赖性,其从-6.7增加到17.9,并讨论了可能的原因。我们还开发了一个模型来提取不同温度下的Rashba型有效电场。结果表明,激子效应将显著影响Rashba型CPGE,而对Dresselhaus型CPGE影响很小。

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