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紫外线照射和纤连蛋白吸附处理的纳米纹理氮化镓表面上细胞生长增强。

Enhanced cell growth on nanotextured GaN surface treated by UV illumination and fibronectin adsorption.

作者信息

Li Jingying, Han Qiusen, Wang Xinhuan, Yang Rong, Wang Chen

机构信息

CAS Key Lab for Biological Effects of Nanomaterials and Nanosafety, National Center for Nanoscience and Technology, Beijing 100190, China.

CAS Key Lab for Biological Effects of Nanomaterials and Nanosafety, National Center for Nanoscience and Technology, Beijing 100190, China; Department of Chemistry, Yangzhou University, Yangzhou 225009, China.

出版信息

Colloids Surf B Biointerfaces. 2014 Nov 1;123:293-301. doi: 10.1016/j.colsurfb.2014.09.030. Epub 2014 Sep 22.

Abstract

Semiconductors are important materials used for the development of high-performance biomedical devices. Gallium nitride (GaN) is a well-known III-nitride semiconductor with excellent optoelectronic properties as well as high chemical stability and biocompatibility. The formation of tight interfaces between GaN substrates and cells would be crucial for GaN-based devices used for probing and manipulating biological processes of cells. Here we report a strategy to greatly enhance cell adhesion and survival on nanotextured GaN surface which was treated by UV illumination and fibronectin (FN) adsorption. Cell studies showed that the UV/FN treatment greatly enhanced cell adhesion and growth on nanotextured GaN surfaces. These observations suggest new opportunities for novel nanotextured GaN-based biomedical devices.

摘要

半导体是用于开发高性能生物医学设备的重要材料。氮化镓(GaN)是一种著名的III族氮化物半导体,具有优异的光电性能以及高化学稳定性和生物相容性。对于用于探测和操纵细胞生物过程的基于GaN的设备而言,在GaN基板和细胞之间形成紧密的界面至关重要。在此,我们报告了一种策略,可大幅增强经紫外线照射和纤连蛋白(FN)吸附处理的纳米纹理化GaN表面上的细胞粘附和存活能力。细胞研究表明,紫外线/纤连蛋白处理极大地增强了细胞在纳米纹理化GaN表面上的粘附和生长。这些观察结果为新型纳米纹理化GaN基生物医学设备带来了新机遇。

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