氮化镓半导体的持续光导性研究和原代神经干细胞的分化。
Investigation of Persistent Photoconductivity of Gallium Nitride Semiconductor and Differentiation of Primary Neural Stem Cells.
机构信息
Jiangxi Provincal Key Laboratory of Tissue Engineering, Gannan Medical University, Ganzhou 341000, China.
School of Medical Information Engineering, Gannan Medical University, Ganzhou 341000, China.
出版信息
Molecules. 2024 Sep 19;29(18):4439. doi: 10.3390/molecules29184439.
A gallium nitride (GaN) semiconductor is one of the most promising materials integrated into biomedical devices to play the roles of connecting, monitoring, and manipulating the activity of biological components, due to its excellent photoelectric properties, chemical stability, and biocompatibility. In this work, it was found that the photogenerated free charge carriers of the GaN substrate, as an exogenous stimulus, served to promote neural stem cells (NSCs) to differentiate into neurons. This was observed through the systematic investigation of the effect of the persistent photoconductivity (PPC) of GaN on the differentiation of primary NSCs from the embryonic rat cerebral cortex. NSCs were directly cultured on the GaN surface with and without ultraviolet (UV) irradiation, with a control sample consisting of tissue culture polystyrene (TCPS) in the presence of fetal bovine serum (FBS) medium. Through optical microscopy, the morphology showed a greater number of neurons with the branching structures of axons and dendrites on GaN with UV irradiation. The immunocytochemical results demonstrated that GaN with UV irradiation could promote the NSCs to differentiate into neurons. Western blot analysis showed that GaN with UV irradiation significantly upregulated the expression of two neuron-related markers, βIII-tubulin (Tuj-1) and microtubule-associated protein 2 (MAP-2), suggesting that neurite formation and the proliferation of NSCs during differentiation were enhanced by GaN with UV irradiation. Finally, the results of the Kelvin probe force microscope (KPFM) experiments showed that the NSCs cultured on GaN with UV irradiation displayed about 50 mV higher potential than those cultured on GaN without irradiation. The increase in cell membrane potential may have been due to the larger number of photogenerated free charges on the GaN surface with UV irradiation. These results could benefit topical research and the application of GaN as a biomedical material integrated into neural interface systems or other bioelectronic devices.
氮化镓（GaN）半导体是一种最有前途的材料之一，可集成到生物医学设备中，发挥连接、监测和操纵生物成分活性的作用，这是由于其优异的光电特性、化学稳定性和生物相容性。在这项工作中，人们发现 GaN 衬底的光生自由电荷载流子作为外源性刺激，有助于促进神经干细胞（NSCs）分化为神经元。这是通过系统研究 GaN 的持久光电导（PPC）对来自胚胎大鼠大脑皮层的原代 NSCs 分化的影响来观察到的。将 NSCs 直接在具有和不具有紫外线（UV）照射的 GaN 表面上进行培养，在存在胎牛血清（FBS）培养基的情况下，对照样品由组织培养聚苯乙烯（TCPS）组成。通过光学显微镜观察，形态显示在具有 UV 照射的 GaN 上具有更多具有轴突和树突分支结构的神经元。免疫细胞化学结果表明，具有 UV 照射的 GaN 可以促进 NSCs 分化为神经元。Western blot 分析表明，具有 UV 照射的 GaN 可显著上调两种神经元相关标志物βIII-微管蛋白（Tuj-1）和微管相关蛋白 2（MAP-2）的表达，这表明 GaN 可促进 NSCs 在分化过程中的神经突形成和增殖。最后，Kelvin 探针力显微镜（KPFM）实验的结果表明，在具有 UV 照射的 GaN 上培养的 NSCs 的膜电位比在没有照射的 GaN 上培养的 NSCs 高约 50 mV。细胞膜电位的增加可能是由于具有 UV 照射的 GaN 表面上的光生自由电荷数量增加。这些结果可能有益于 GaN 作为生物医学材料的应用研究，将其集成到神经接口系统或其他生物电子设备中。
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