Huang Susan R, Lu Xuesong, Barnett Allen, Opila Robert L, Mogili Vishnu, Tanner David A, Nakahara Shohei
Department of Materials Science and Engineering, 201 DuPont Hall, University of Delaware , Newark, Delaware 19716, United States.
ACS Appl Mater Interfaces. 2014 Nov 12;6(21):18626-34. doi: 10.1021/am503448g. Epub 2014 Oct 27.
The development of a cost-effective Si based platform on which III-V's can be grown is of great interest. This work investigates the morphology of gallium phosphide (GaP) films grown on {111} silicon (Si) substrates by means of liquid phase epitaxy in a tin (Sn) - based solvent bath. Two types of single-crystal {111} Si substrates were used; the first type was oriented exactly along the ⟨111⟩ surface (no-miscut) and the second was miscut by 4°. The growth rate of the GaP films was found to be markedly different for the two types of substrates; the GaP films on the miscut Si substrate grew ∼4 times faster than those on the no-miscut substrate. The GaP films grew epitaxially on both types of substrates, but contained Si and Sn as inclusions. In the case of the no-miscut substrate, a number of large Sn particles were incorporated at the GaP/Si interface. As a result, these interfacial Sn particles affected the strain state of the GaP films dramatically, which, in turn, manifested itself in the form of a duplex microstructure that consists of strained and strain-free regions.
开发一种具有成本效益的可生长III-V族化合物的硅基平台备受关注。这项工作研究了在基于锡（Sn）的溶剂浴中通过液相外延在{111}硅（Si）衬底上生长的磷化镓（GaP）薄膜的形貌。使用了两种类型的单晶{111} Si衬底；第一种类型精确地沿⟨111⟩表面取向（无错切），第二种错切4°。发现两种类型衬底上GaP薄膜的生长速率明显不同；错切Si衬底上的GaP薄膜生长速度比无错切衬底上的快约4倍。GaP薄膜在两种类型的衬底上均外延生长，但含有Si和Sn作为夹杂物。在无错切衬底的情况下，许多大的Sn颗粒掺入到GaP/Si界面处。结果，这些界面Sn颗粒极大地影响了GaP薄膜的应变状态，进而表现为一种由应变区和无应变区组成的双相微观结构。
