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在非标准切割的Si(111)晶圆上生长的AlGaN高电子迁移率晶体管结构

AlGaN HEMT Structures Grown on Miscut Si(111) Wafers.

作者信息

Sakharov Alexei V, Arteev Dmitri S, Zavarin Evgenii E, Nikolaev Andrey E, Lundin Wsevolod V, Prasolov Nikita D, Yagovkina Maria A, Tsatsulnikov Andrey F, Fedotov Sergey D, Sokolov Evgenii M, Statsenko Vladimir N

机构信息

Submicron Heterostructures for Microelectronics, Research and Engineering Center, RAS, 26 Politekhnicheskaya, 194021 Saint-Petersburg, Russia.

Ioffe Institute, 26 Politekhnicheskaya, 194021 Saint-Petersburg, Russia.

出版信息

Materials (Basel). 2023 Jun 8;16(12):4265. doi: 10.3390/ma16124265.

DOI:10.3390/ma16124265
PMID:37374449
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10303388/
Abstract

A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. The results showed that wafer misorientation had an influence on the strain evolution during the growth and surface morphology, and could have a strong impact on the mobility of 2D electron gas, with a weak optimum at 0.5° miscut angle. A numerical analysis revealed that the interface roughness was a main parameter responsible for the variation in electron mobility.

摘要

对通过金属有机气相外延生长在具有高电阻外延硅层的错切Si(111)晶片上的一组AlGaN/GaN高电子迁移率晶体管结构进行了一项复杂的研究，以研究衬底错切对其性能的影响。结果表明，晶片的取向错误对生长过程中的应变演化和表面形态有影响，并且可能对二维电子气的迁移率产生强烈影响，在0.5°错切角时有一个较弱的最佳值。数值分析表明，界面粗糙度是导致电子迁移率变化的主要参数。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1efb/10303388/bb3316fe8235/materials-16-04265-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1efb/10303388/cbeeca3bed39/materials-16-04265-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1efb/10303388/4d49b6d6de39/materials-16-04265-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1efb/10303388/fa418fe04846/materials-16-04265-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1efb/10303388/06ae3acbd1c1/materials-16-04265-g004a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1efb/10303388/d3ab9d233578/materials-16-04265-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1efb/10303388/bb3316fe8235/materials-16-04265-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1efb/10303388/cbeeca3bed39/materials-16-04265-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1efb/10303388/4d49b6d6de39/materials-16-04265-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1efb/10303388/fa418fe04846/materials-16-04265-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1efb/10303388/06ae3acbd1c1/materials-16-04265-g004a.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1efb/10303388/d3ab9d233578/materials-16-04265-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1efb/10303388/bb3316fe8235/materials-16-04265-g006.jpg

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本文引用的文献

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Micromachines (Basel). 2022 Dec 1;13(12):2133. doi: 10.3390/mi13122133.
2
Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer.具有铁掺杂氮化镓缓冲层的氮化铝镓/氮化铝/氮化镓异质结构的散射分析
Materials (Basel). 2022 Dec 14;15(24):8945. doi: 10.3390/ma15248945.
3
Diamond/GaN HEMTs: Where from and Where to?
金刚石/氮化镓高电子迁移率晶体管：何去何从？
Materials (Basel). 2022 Jan 6;15(2):415. doi: 10.3390/ma15020415.
4
Surface roughness at the Si(100)-SiO2 interface.硅（100）-二氧化硅界面处的表面粗糙度。
Phys Rev B Condens Matter. 1985 Dec 15;32(12):8171-8186. doi: 10.1103/physrevb.32.8171.