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具有羰基桥连噻唑稠合多环体系的π共轭化合物的合成、性质及n型晶体管特性

Synthesis, properties, and n-type transistor characteristics of π-conjugated compounds having a carbonyl-bridged thiazole-fused polycyclic system.

作者信息

Ie Yutaka, Sato Chihiro, Nitani Masashi, Tada Hirokazu, Aso Yoshio

机构信息

The Institute of Scientific and Industrial Research (ISIR), Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan), Fax: (+81) 6-6879-8479; JST-PRESTO, 4-1-8, Honcho, Kawaguchi, Saitama 333-0012 (Japan).

出版信息

Chemistry. 2014 Dec 8;20(50):16509-15. doi: 10.1002/chem.201404255. Epub 2014 Oct 14.

DOI:10.1002/chem.201404255
PMID:25314152
Abstract

A series of electron-deficient π-conjugated systems with 4,9-dihydro-s-indaceno[2,1-d:6,5-d']dithiazole-4,9-dione-based structures and fluorinated acyl groups as the terminal units have been designed and synthesized for application as organic field-effect transistor (OFET) materials. The thermal, photophysical, and electrochemical properties and OFET performance of the synthesized compounds were investigated. OFET evaluation revealed that all compounds exhibited typical electron-transporting characteristics, and electron mobilities up to 0.26 cm(2)  V(-1)  s(-1) could be achieved. The air stabilities of OFET operation were dependent on the nature of the compounds and were investigated by X-ray diffraction and atomic force microscopy. The terminal units had a great influence not only on the molecular properties, but also on the film-forming properties and OFET performance.

摘要

设计并合成了一系列以4,9-二氢-s-茚并[2,1-d:6,5-d']二噻唑-4,9-二酮为基础结构、以氟化酰基为末端单元的缺电子π共轭体系,用于作为有机场效应晶体管(OFET)材料。研究了合成化合物的热、光物理和电化学性质以及OFET性能。OFET评估表明,所有化合物均表现出典型的电子传输特性,并且可以实现高达0.26 cm² V⁻¹ s⁻¹的电子迁移率。OFET操作的空气稳定性取决于化合物的性质,并通过X射线衍射和原子力显微镜进行了研究。末端单元不仅对分子性质有很大影响,而且对成膜性质和OFET性能也有很大影响。

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