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不同气氛下退火对用于热电应用的掺锡氧化铟层特性的影响。

Impact of Annealing in Various Atmospheres on Characteristics of Tin-Doped Indium Oxide Layers towards Thermoelectric Applications.

作者信息

Kaźmierczak-Bałata Anna, Bodzenta Jerzy, Szperlich Piotr, Jesionek Marcin, Michalewicz Anna, Domanowska Alina, Mayandi Jeyanthinath, Venkatachalapathy Vishnukanthan, Kuznetsov Andrej

机构信息

Institute of Physics-CSE, Silesian University of Technology, Konarskiego 22B, 44-100 Gliwice, Poland.

Department of Materials Science, School of Chemistry, Madurai Kamaraj University, Madurai 625 021, India.

出版信息

Materials (Basel). 2024 Sep 20;17(18):4606. doi: 10.3390/ma17184606.

DOI:10.3390/ma17184606
PMID:39336347
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11432847/
Abstract

The aim of this work was to investigate the possibility of modifying the physical properties of indium tin oxide (ITO) layers by annealing them in different atmospheres and temperatures. Samples were annealed in vacuum, air, oxygen, nitrogen, carbon dioxide and a mixture of nitrogen with hydrogen (NHM) at temperatures from 200 °C to 400 °C. Annealing impact on the crystal structure, optical, electrical, thermal and thermoelectric properties was examined. It has been found from XRD measurements that for samples annealed in air, nitrogen and NHM at 400 °C, the InO/InSnO share ratio decreased, resulting in a significant increase of the InSnO phase. The annealing at the highest temperature in air and nitrogen resulted in larger grains and the mean grain size increase, while vacuum, NHM and carbon dioxide atmospheres caused the decrease in the mean grain size. The post-processing in vacuum and oxidizing atmospheres effected in a drop in optical bandgap and poor electrical properties. The carbon dioxide seems to be an optimal atmosphere to obtain good TE generator parameters-high ZT. The general conclusion is that annealing in different atmospheres allows for controlled changes in the structure and physical properties of ITO layers.

摘要

这项工作的目的是研究通过在不同气氛和温度下对铟锡氧化物（ITO）层进行退火来改变其物理性质的可能性。样品在真空、空气、氧气、氮气、二氧化碳以及氮气与氢气的混合物（NHM）中于200℃至400℃的温度下进行退火。研究了退火对晶体结构、光学、电学、热学和热电性能的影响。通过X射线衍射测量发现，对于在400℃的空气、氮气和NHM中退火的样品，InO/InSnO的份额比降低，导致InSnO相显著增加。在空气和氮气中最高温度下的退火导致晶粒更大且平均晶粒尺寸增加，而真空、NHM和二氧化碳气氛导致平均晶粒尺寸减小。在真空和氧化气氛中的后处理导致光学带隙下降和电学性能不佳。二氧化碳似乎是获得良好热电发电机参数——高ZT的最佳气氛。总的结论是，在不同气氛中退火可以控制ITO层的结构和物理性质的变化。

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Sci Rep. 2023 Jun 16;13(1):9798. doi: 10.1038/s41598-023-37042-y.
2
Realizing the Accurate Measurements of Thermal Conductivity over a Wide Range by Scanning Thermal Microscopy Combined with Quantitative Prediction of Thermal Contact Resistance.通过扫描热显微镜结合热接触电阻的定量预测实现宽范围内热导率的精确测量。
Small. 2023 Aug;19(32):e2300968. doi: 10.1002/smll.202300968. Epub 2023 Apr 17.
3
Influence of Post Processing on Thermal Conductivity of ITO Thin Films.
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4
Superior Thermoelectric Performance of Robust Column-Layer ITO Thin Films Tuning by Profuse Interfaces.通过大量界面调控实现的坚固柱状层ITO薄膜的卓越热电性能。
ACS Appl Mater Interfaces. 2022 Aug 10;14(31):36258-36267. doi: 10.1021/acsami.2c09907. Epub 2022 Jul 26.
5
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J Nanosci Nanotechnol. 2019 Mar 1;19(3):1455-1462. doi: 10.1166/jnn.2019.16242.
6
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Materials (Basel). 2016 Jan 20;9(1):63. doi: 10.3390/ma9010063.
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Ultramicroscopy. 2017 Apr;175:81-86. doi: 10.1016/j.ultramic.2017.01.012. Epub 2017 Jan 27.
8
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Nanoscale Res Lett. 2014 Oct 17;9(1):579. doi: 10.1186/1556-276X-9-579. eCollection 2014.
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10
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Rev Sci Instrum. 2013 Sep;84(9):093702. doi: 10.1063/1.4819738.