Mitrofanov K V, Kolobov A V, Fons P, Krbal M, Tominaga J, Uruga T
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan.
J Phys Condens Matter. 2014 Nov 26;26(47):475502. doi: 10.1088/0953-8984/26/47/475502. Epub 2014 Oct 30.
Pb(x)Sn(1-x)Te and Pb(x)Sn(1-x)Se crystals belong to the class of topological crystalline insulators where topological protection is achieved due to crystal symmetry rather than time-reversal symmetry. In this work, we make use of selection rules in the x-ray absorption process to experimentally detect band inversion along the PbTe(Se)-SnTe(Se) tie-lines. The observed significant change in the ratio of intensities of L1 and L3 transitions along the tie-line demonstrates that x-ray absorption can be a useful tool to study band inversion in topological insulators.
Pb(x)Sn(1-x)Te和Pb(x)Sn(1-x)Se晶体属于拓扑晶体绝缘体类别，其中拓扑保护是由于晶体对称性而非时间反演对称性实现的。在这项工作中，我们利用X射线吸收过程中的选择规则，通过实验检测沿PbTe(Se)-SnTe(Se)连接线的能带反转。观察到沿连接线L1和L3跃迁强度比的显著变化，表明X射线吸收可以成为研究拓扑绝缘体中能带反转的有用工具。
