[Photo-stimulated and long persistent luminescence properties of Sr3SiO5 : Eu2+, RE3+ (RE = Nd3+, Ho3+, La3+)].

A series of electron capture materials Sr3SiO5 : Eu2+, RE3+ (RE = Nd3+, Ho3+, La3+) were prepared by high temperature solid state method. The photo-stimulated luminescence (PSL) and long afterglow performance were evaluated. After excited by UV light, it showed a strong up-conversion photo-stimulated read-out response when stimulated by 980 nm laser, which is attributed to the existence of deep traps (438 K). This property was especially shown in Sr3 SiO5 : Eu2+, La3+ and Sr3SiO5 : EU2+, Ho3+. Subsequently, the trapping depth and carrier concentration were studied. In this way, we verified the cause of PSL. The calculation of parameters of trapping electron in the thermoluminescence spectrum is through the method of Chen's half width, getting the value of trapping depth under the temperature of 438 K, which contrasts to the energy of 980 nm laser radiation. At the same time, the afterglow performance after co-doping with rare earth ion was greatly improved. The afterglow time of Sr3 SiO5 : Eu2+ , La3+ is up to 12 hours. Research results show that the change in mixed trap structure is the primary cause of photo-stimulated and long persistent luminescence properties.