Zhang Zhe, Xu Xu-hui, Qiu Jian-bei, Zhang Xin, Yu Xue
Guang Pu Xue Yu Guang Pu Fen Xi. 2014 Jun;34(6):1486-91.
A series of electron capture materials Sr3SiO5 : Eu2+, RE3+ (RE = Nd3+, Ho3+, La3+) were prepared by high temperature solid state method. The photo-stimulated luminescence (PSL) and long afterglow performance were evaluated. After excited by UV light, it showed a strong up-conversion photo-stimulated read-out response when stimulated by 980 nm laser, which is attributed to the existence of deep traps (438 K). This property was especially shown in Sr3 SiO5 : Eu2+, La3+ and Sr3SiO5 : EU2+, Ho3+. Subsequently, the trapping depth and carrier concentration were studied. In this way, we verified the cause of PSL. The calculation of parameters of trapping electron in the thermoluminescence spectrum is through the method of Chen's half width, getting the value of trapping depth under the temperature of 438 K, which contrasts to the energy of 980 nm laser radiation. At the same time, the afterglow performance after co-doping with rare earth ion was greatly improved. The afterglow time of Sr3 SiO5 : Eu2+ , La3+ is up to 12 hours. Research results show that the change in mixed trap structure is the primary cause of photo-stimulated and long persistent luminescence properties.
采用高温固相法制备了一系列电子俘获材料Sr3SiO5:Eu2 +, RE3 +（RE = Nd3 +, Ho3 +, La3 +）。对其光激励发光（PSL）和长余辉性能进行了评估。在紫外光激发后，当用980 nm激光激发时，它表现出强烈的上转换光激励读出响应，这归因于深陷阱（438 K）的存在。这种特性在Sr3SiO5:Eu2 +, La3 +和Sr3SiO5:Eu2 +, Ho3 +中尤为明显。随后，研究了陷阱深度和载流子浓度。通过这种方式，我们验证了PSL的成因。热释光光谱中俘获电子参数的计算是通过Chen的半高宽方法进行的，得到了438 K温度下的陷阱深度值，该值与980 nm激光辐射的能量形成对比。同时，共掺杂稀土离子后的余辉性能得到了极大改善。Sr³SiO₅:Eu²⁺,La³⁺的余辉时间长达12小时。研究结果表明，混合陷阱结构的变化是光激励和长余辉发光性能的主要原因。
