在 Sr3SiO5: Eu2+ 中掺杂 Tm3+ 强烈增强光致发光。

Strongly enhancing photostimulated luminescence by doping Tm3+ in Sr3SiO5: Eu2+.

机构信息

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

出版信息

Opt Lett. 2013 Jan 15;38(2):148-50. doi: 10.1364/OL.38.000148.

DOI:10.1364/OL.38.000148

PMID:23454944

Abstract

We report a large enhancement of yellow photostimulated luminescence (PSL) by codoping Tm3+ in Sr3SiO5:Eu2+ upon infrared stimulation at 980 nm after pre-exposure in Ultraviolet light. The initial PSL intensity and light storage capacity are enhanced by a factor of 33 and 2, respectively, for Tm3+ concentration at 0.0004. The thermoluminescence spectra indicate that codoping Tm3+ generates a trap peaking at 385 K. The trap is much more sensitive to infrared light than the original one, so that the light storage period of the material is beyond tens of days with the minimum detectable infrared power density only 54 μW/cm2.

摘要

我们报告了在 980nm 红外光激发下，Sr3SiO5:Eu2+中 Tm3+共掺杂后黄色光致发光（PSL）的显著增强，该增强是在紫外光预辐照后实现的。对于 Tm3+浓度为 0.0004 的样品，初始 PSL 强度和光存储能力分别增强了 33 倍和 2 倍。热释光光谱表明，共掺杂 Tm3+产生了一个位于 385K 的陷阱。与原始陷阱相比，该陷阱对红外光更加敏感，因此材料的光存储时间超过了数十天，最低可检测红外光功率密度仅为 54μW/cm2。