Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology , Julianalaan 136, 2628 BL Delft, The Netherlands.
Nano Lett. 2014 Dec 10;14(12):7039-45. doi: 10.1021/nl503406a. Epub 2014 Nov 10.
The nature and decay dynamics of photoexcited states in CdSe core-only and CdSe/CdS core/shell nanoplatelets was studied. The photophysical species produced after ultrafast photoexcitation are studied using a combination of time-resolved photoluminescence (PL), transient absorption (TA), and terahertz (THz) conductivity measurements. The PL, TA, and THz exhibit very different decay kinetics, which leads to the immediate conclusion that photoexcitation produces different photophysical species. It is inferred from the data that photoexcitation initially leads to formation of bound electron-hole pairs in the form of neutral excitons. The decay dynamics of these excitons can be understood by distinguishing nanoplatelets with and without exciton quenching site, which are present in the sample with close to equal amounts. In absence of a quenching site, the excitons undergo PL decay to the ground state. In nanoplatelets with a quenching site, part of the initially produced excitons decays by hole trapping at a defect site. The electron that remains in the nanoplatelet moves in the Coulomb potential provided by the trapped hole.
我们研究了 CdSe 核壳纳米盘的 CdSe 核和 CdSe/CdS 核壳纳米盘的光激发态的性质和衰减动力学。通过结合瞬态光致发光(PL)、瞬态吸收(TA)和太赫兹(THz)电导率测量,研究了超快光激发后产生的光物理物种。PL、TA 和 THz 表现出非常不同的衰减动力学,这立即得出结论,光激发产生了不同的光物理物种。从数据中推断,光激发最初导致形成中性激子形式的束缚电子-空穴对。通过区分具有和不具有激子猝灭位的纳米盘,可以理解这些激子的衰减动力学,这些纳米盘在样品中以几乎相等的量存在。在没有猝灭位的情况下,激子通过 PL 衰减到基态。在具有猝灭位的纳米盘中,部分最初产生的激子通过在缺陷位的空穴捕获而衰减。留在纳米盘中的电子在由捕获的空穴提供的库仑势中移动。