Department of Materials Science and Engineering, National Tsing Hua University Hsinchu, 30013 (Taiwan).
National Synchrotron Radiation Research Center Hsinchu (Taiwan).
Adv Mater. 2009 Dec 28;21(48):4970-4974. doi: 10.1002/adma.200902101. Epub 2009 Oct 13.
Hexagonal-phase single-crystal Gd2 O3 is deposited on GaN in a molecular beam epitaxy system. The dielectric constant is about twice that of its cubic counterpart when deposited on InGaAs or Si. The capacitive effective thickness of 0.5 nm in hexagonal Gd2 O3 is perhaps the lowest on GaN-metal-oxide-semiconductor devices. The heterostructure is thermo dynamically stable at high temperatures and exhibits low interfacial densities of states after high-temperature annealing.
六方相单晶 Gd2 O3 采用分子束外延系统沉积在 GaN 上。当沉积在 InGaAs 或 Si 上时，其介电常数约为立方相的两倍。在 GaN 金属氧化物半导体器件中，六方相 Gd2 O3 的电容有效厚度为 0.5nm，或许是最低的。该异质结构在高温下热力学稳定，并且在高温退火后具有低的界面态密度。
