Hanke Michael, Kaganer Vladimir M, Bierwagen Oliver, Niehle Michael, Trampert Achim
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, Berlin, D-10117, Germany.
Nanoscale Res Lett. 2012 Mar 29;7(1):203. doi: 10.1186/1556-276X-7-203.
We studied the early stages of Gd2O3 epitaxy on Si(111) in real time by synchrotron-based, high-resolution X-ray diffraction and by reflection high-energy electron diffraction. A comparison between model calculations and the measured X-ray scattering, and the change of reflection high-energy electron diffraction patterns both indicate that the growth begins without forming a three-dimensional crystalline film. The cubic bixbyite structure of Gd2O3 appears only after a few monolayers of deposition.
我们通过基于同步加速器的高分辨率X射线衍射和反射高能电子衍射实时研究了Gd2O3在Si(111)上的早期外延生长阶段。模型计算与测量的X射线散射之间的比较以及反射高能电子衍射图案的变化均表明,生长开始时并未形成三维晶体薄膜。Gd2O3的立方铁铈矿结构仅在沉积几层后才出现。