1] Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan, R.O.C [2] Institute of Physics, Academia Sinica, Taipei 11529, Taiwan, R.O.C.
Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan, R.O.C.
Sci Rep. 2014 Nov 10;4:6967. doi: 10.1038/srep06967.
We utilized a thermal radiation method to synthesize semiconducting hollow ZnO nanoballoons and metal-semiconductor concentric solid Zn/ZnO nanospheres from metallic solid Zn nanospheres. The chemical properties, crystalline structures, and photoluminescence mechanisms for the metallic solid Zn nanospheres, semiconducting hollow ZnO nanoballoons, and metal-semiconductor concentric solid Zn/ZnO nanospheres are presented. The PL emissions of the metallic Zn solid nanospheres are mainly dependent on the electron transitions between the Fermi level (E(F)) and the 3d band, while those of the semiconducting hollow ZnO nanoballoons are ascribed to the near band edge (NBE) and deep level electron transitions. The PL emissions of the metal-semiconductor concentric solid Zn/ZnO nanospheres are attributed to the electron transitions across the metal-semiconductor junction, from the E(F) to the valence and 3d bands, and from the interface states to the valence band. All three nanostructures are excellent room-temperature light emitters.
我们利用热辐射法从金属固态 Zn 纳米球出发，合成了半导体中空 ZnO 纳米气球和金属-半导体同心固溶体 Zn/ZnO 纳米球。文中呈现了金属固态 Zn 纳米球、半导体中空 ZnO 纳米气球和金属-半导体同心固溶体 Zn/ZnO 纳米球的化学性质、晶体结构和光致发光机制。金属 Zn 固态纳米球的光致发光发射主要依赖于费米能级 (E(F)) 和 3d 带之间的电子跃迁，而半导体中空 ZnO 纳米气球的光致发光发射则归因于近带边 (NBE) 和深能级电子跃迁。金属-半导体同心固溶体 Zn/ZnO 纳米球的光致发光发射则归因于电子在金属-半导体结处的跃迁，从费米能级 (E(F)) 到价带和 3d 带，以及从界面态到价带。这三种纳米结构都是出色的室温光发射器。
