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一种在图案化蓝宝石衬底上使用具有不同厚度铝牺牲层的剥离技术合成新型ZnO纳米花阵列的方法。

A Novel Synthesis of ZnO Nanoflower Arrays Using a Lift-Off Technique with Different Thicknesses of Al Sacrificial Layers on a Patterned Sapphire Substrate.

作者信息

Tseng Hsien-Wei, Wang Ching-Shan, Wang Fang-Hsing, Liu Han-Wen, Yang Cheng-Fu

机构信息

College of Artificial Intelligence, Yango University, Mawei District, Fuzhou 350015, China.

Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan.

出版信息

Nanomaterials (Basel). 2022 Feb 11;12(4):612. doi: 10.3390/nano12040612.

Abstract

A novel method to synthesize large-scale ZnO nanoflower arrays using a protrusion patterned ZnO seed layer was investigated. Different thicknesses of aluminum (Al) film were deposited on the concave patterned sapphire substrate as a sacrificial layer. ZnO gel was layered onto the Al film as a seed layer and OE-6370HF AB optical glue was used as the adhesive material. A lift-off technique was used to transfer the protrusion patterned ZnO/AB glue seed layer to a P-type Si <100> wafer. The hydrothermal method using Zn(CHCOO) and CHN solutions as liquid precursors was used to synthesize ZnO nanoflower arrays on the patterned seed layer. X-ray diffraction spectra, field-effect scanning electron microscopy, focused ion beam milling (for obtaining cross-sectional views), and photoluminescence (PL) spectrometry were used to analyze the effects that different synthesis times and different thicknesses of Al sacrificial layer had on the properties of ZnO nanoflower arrays. These effects included an increased diameter, and a decreased height, density (i.e., number of nanorods in μm), total surface area, total volume, and maximum emission intensity of PL spectrum. We showed that when the synthesis time and the thickness of the Al sacrificial layer were increased, the emission intensities of the ultraviolet light and visible light had different variations.

摘要

研究了一种使用突起图案化的ZnO籽晶层合成大规模ZnO纳米花阵列的新方法。在凹面图案化的蓝宝石衬底上沉积不同厚度的铝(Al)膜作为牺牲层。将ZnO凝胶作为籽晶层层叠在Al膜上,并使用OE-6370HF AB光学胶作为粘合材料。采用剥离技术将突起图案化的ZnO/AB胶籽晶层转移到P型Si<100>晶片上。以Zn(CHCOO)和CHN溶液作为液体前驱体,采用水热法在图案化的籽晶层上合成ZnO纳米花阵列。利用X射线衍射光谱、场效应扫描电子显微镜、聚焦离子束铣削(用于获得横截面视图)和光致发光(PL)光谱分析不同合成时间和不同厚度的Al牺牲层对ZnO纳米花阵列性能的影响。这些影响包括直径增加、高度降低、密度(即每微米纳米棒的数量)、总表面积、总体积以及PL光谱的最大发射强度降低。我们表明,当合成时间和Al牺牲层的厚度增加时,紫外光和可见光的发射强度有不同的变化。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/db19/8876705/7fca91cbd2c1/nanomaterials-12-00612-g001.jpg

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