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介质包层对基于InGaAsP多量子阱的有源等离子体器件的影响。

Effect of dielectric cladding on active plasmonic device based on InGaAsP multiple quantum wells.

作者信息

Li Yicen, Zhang Hui, Mei Ting, Zhu Ning, Zhang Dao Hua, Teng Jinghua

出版信息

Opt Express. 2014 Oct 20;22(21):25599-607. doi: 10.1364/OE.22.025599.

Abstract

The Surface Plasmon Polariton (SPP) planar waveguide with amorphous silicon (α-Si) cladding is studied, for empowering the device modulation response. The device is fabricated with multiple quantum wells (MQWs) as the gain media electrically pumped for compensating SPP propagation loss on Au film waveguide. The SPP propagation greatly benefits from the modal gain for the long-range hybrid mode, which is optimized by adopting an α-Si cladding layer accompanied with minimal degradation of mode confinement. The proposed structure presented more sensitive response to electrical manipulation than the one without cladding in experiment.

摘要

研究了具有非晶硅(α-Si)包层的表面等离子体激元(SPP)平面波导,以增强器件的调制响应。该器件采用多量子阱(MQW)作为增益介质,通过电泵浦来补偿金膜波导上的SPP传播损耗。对于长程混合模式,SPP传播极大地受益于模态增益,通过采用α-Si包层来优化这种增益,同时模式限制的退化最小。在实验中,所提出的结构对电操控的响应比没有包层的结构更敏感。

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