Department of Materials, University of Oxford , Parks Road, Oxford OX1 3PH, United Kingdom.
ACS Nano. 2015 Jan 27;9(1):656-62. doi: 10.1021/nn505996c. Epub 2014 Dec 15.
We show that dislocations located at the edge of graphene cause different lattice deformations to those located in the bulk lattice. When a dislocation is located near an edge, a decrease in the rippling and increase of the in-plane rotation occurs relative to the dislocations in the bulk. The increased in-plane rotation near the edge causes bond rotations at the edge of graphene to reduce the overall strain in the system. Dislocations were highly stable and remained fixed in their position even when located within a few lattice spacings from the edge of graphene. We study this behavior at the atomic level using aberration-corrected transmission electron microscopy. These results show detailed information about the behavior of dislocations in 2D materials and the strain properties that result.
我们表明,位于石墨烯边缘的位错会引起与位于体晶格中的位错不同的晶格变形。当位错位于边缘附近时,与体晶格中的位错相比,其起伏减小,面内旋转增加。边缘附近增加的面内旋转导致石墨烯边缘的键旋转减少系统中的整体应变。位错非常稳定,即使位于离石墨烯边缘几个晶格间距内,也保持在其位置固定。我们使用像差校正的透射电子显微镜在原子水平上研究这种行为。这些结果显示了关于二维材料中位错行为和由此产生的应变特性的详细信息。