Department of Materials, University of Oxford , Parks Road, Oxford, OX1 3PH, United Kingdom.
Department of Materials Science and Engineering, Seoul National University , Seoul, Korea.
Nano Lett. 2015 Sep 9;15(9):5950-5. doi: 10.1021/acs.nanolett.5b02080. Epub 2015 Aug 27.
We demonstrate the formation of partial dislocations in graphene at elevated temperatures of ≥500 °C with single atom resolution aberration corrected transmission electron microscopy. The partial dislocations spatially redistribute strain in the lattice, providing an energetically more favorable configuration to the perfect dislocation. Low-energy migration paths mediated by partial dislocation formation have been observed, providing insights into the atomistic dynamics of graphene during annealing. These results are important for understanding the high temperature plasticity of graphene and partial dislocation behavior in related crystal systems, such as diamond cubic materials.
我们使用单原子分辨率的像差校正透射电子显微镜，在≥500°C 的高温下，证实了石墨烯中部分位错的形成。这些部分位错在晶格中重新分配应变，为完美位错提供了更有利的能量配置。通过部分位错形成介导的低能迁移路径已被观察到，为退火过程中石墨烯的原子动力学提供了深入的了解。这些结果对于理解石墨烯的高温塑性以及相关晶体系统（如立方金刚石材料）中的部分位错行为非常重要。
