通过氧化锌的氮掺杂改善半导体聚合物：氧化锌供体：受体界面处的激子解离
Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO.
作者信息
Musselman Kevin P, Albert-Seifried Sebastian, Hoye Robert L Z, Sadhanala Aditya, Muñoz-Rojas David, MacManus-Driscoll Judith L, Friend Richard H
机构信息
Department of Physics University of Cambridge Cavendish Laboratory JJ Thomson Ave Cambridge, CB3 0HE, UK E-mail:
Department of Materials Science & Metallurgy University of Cambridge 27 Charles Babbage Road, Cambridge, CB3 0FS, UK.
出版信息
Adv Funct Mater. 2014 Jun;24(23):3562-3570. doi: 10.1002/adfm.201303994. Epub 2014 Mar 7.
Exciton dissociation at the zinc oxide/poly(3-hexylthiophene) (ZnO/P3HT) interface as a function of nitrogen doping of the zinc oxide, which decreases the electron concentration from approximately 10 cm to 10 cm, is reported. Exciton dissociation and device photocurrent are strongly improved with nitrogen doping. This improved dissociation of excitons in the conjugated polymer is found to result from enhanced light-induced de-trapping of electrons from the surface of the nitrogen-doped ZnO. The ability to improve the surface properties of ZnO by introducing a simple nitrogen dopant has general applicability.
据报道，氧化锌/聚（3-己基噻吩）（ZnO/P3HT）界面处的激子解离与氧化锌的氮掺杂有关，氮掺杂使电子浓度从约10¹⁹ cm⁻³降至10¹⁷ cm⁻³。氮掺杂极大地改善了激子解离和器件光电流。研究发现，共轭聚合物中激子解离的改善源于氮掺杂ZnO表面光致电子脱陷阱的增强。通过引入简单的氮掺杂剂来改善ZnO表面性质的能力具有普遍适用性。
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