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通过原子吸附对铋和锑薄膜进行拓扑态调制。

Topological states modulation of Bi and Sb thin films by atomic adsorption.

作者信息

Wang Dongchao, Chen Li, Liu Hongmei, Wang Xiaoli, Cui Guangliang, Zhang Pinhua, Zhao Dapeng, Ji Shuaihua

机构信息

School of Physics, Shandong University, Shandong 250100, China.

出版信息

Phys Chem Chem Phys. 2015 Feb 7;17(5):3577-83. doi: 10.1039/c4cp04502e.

DOI:10.1039/c4cp04502e
PMID:25537553
Abstract

Based on first-principles calculations, we systematically investigated the topological surface states of Bi and Sb thin films of 1-5 bilayers in (111) orientation without and with H(F) adsorption, respectively. We find that compared with clean Bi and Sb films, a huge band gap advantageous to observe the quantum spin Hall effect can be opened in chemically decorated bilayer Bi and Sb films, and the quantum phase transition from trivial (non-trivial) to non-trivial (trivial) phase is induced for a three bilayer Bi film and single (four) bilayer Sb film. Surface adsorption is an effective tool to manipulate the geometry, electronic structures and topological properties of film materials.

摘要

基于第一性原理计算,我们分别系统地研究了(111)取向的1 - 5个双层Bi和Sb薄膜在无H(F)吸附和有H(F)吸附情况下的拓扑表面态。我们发现,与清洁的Bi和Sb薄膜相比,化学修饰的双层Bi和Sb薄膜中可以打开有利于观察量子自旋霍尔效应的巨大带隙,并且对于三层双层Bi薄膜和单层(四层)双层Sb薄膜会诱导出从平凡(非平凡)到非平凡(平凡)相的量子相变。表面吸附是操纵薄膜材料的几何结构、电子结构和拓扑性质的有效工具。

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引用本文的文献

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Strain Effect on Electronic Structure and Work Function in α-Fe₂O₃ Films.应变对α-Fe₂O₃薄膜电子结构和功函数的影响。
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Quantum spin Hall insulator in halogenated arsenene films with sizable energy gaps.具有可观能隙的卤化砷烯薄膜中的量子自旋霍尔绝缘体。
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